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| SI5424DC New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a 6 6 rDS(on) (W) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V Qg (Typ) 11 nC D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - Notebook PC RoHS COMPLIANT ChipFET 1206-8 1 D D D D S D D G D Marking Code AF XXX Lot Traceability and Date Code Part # Code S N-Channel MOSFET G Bottom View Ordering Information: SI5424DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH 0.1 TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 " 25 6a 6a 6a 6a 40 5.2a 2.1b, c 16 12.8 6.25 4.0 2.5b, c 1.6b, c - 55 to 150 260 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t p 5 sec Steady State Symbol RthJA RthJF Typical 40 15 Maximum 50 20 Unit _C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The ChipFET 1206-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 _C/W. Document Number: 73776 S-60216--Rev. A, 20-Feb-06 www.vishay.com 1 SI5424DC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = " 25 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 _C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.8 A VGS = 4.5 V, ID = 4.22 A VDS = 15 V, ID = 4.8 A 40 0.020 0.024 17 0.024 0.030 1.1 30 19.4 - 4.6 2.3 "100 1 10 mV/_C V ns mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 2.5 W ID ^ 6 A, VGEN = 10 V, Rg = 1 W VDD = 15 V, RL = 2.63 W ID ^ 5.7 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 4.8 A VDS = 15 V, VGS = 4.5 V, ID = 4.8 A VDS = 15 V, VGS = 0 V, f = 1 MHz 950 230 180 21 11 3.2 4.2 2.2 17 75 22 12 10 38 26 9 26 113 33 18 15 57 40 14 ns W 32 17 nC p pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. IS ISM VSD trr Qrr ta tb IF = 4 3 A di/dt = 100 A/ms TJ = 25 _C 4.3 A, A/ms, IS = 4.3 A, VGS = 0 V 0.8 24 11 9 15 ns TC = 25 _C 6 40 1.2 36 17 A V ns nC www.vishay.com 2 Document Number: 73776 S-60216--Rev. A, 20-Feb-06 SI5424DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 40 VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V 4 5 Vishay Siliconix Transfer Characteristics 30 3 20 VGS = 3 V 2 TJ = 25 _C 1 TJ = 125 _C TJ = - 55 _C 0.6 1.2 1.8 2.4 3.0 10 VGS = 2 V 0 0.0 0.6 1.2 1.8 2.4 3.0 0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.04 1500 Capacitance rDS(on) - On-Resistance (mW) 1200 C - Capacitance (pF) Ciss 900 0.03 VGS = 4.5 V VGS = 10 V 0.02 600 Coss 300 Crss 0.01 0 8 16 24 32 40 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 6 A 8 VDS = 15 V 6 VDS = 24 V rDS(on) - On-Resistance (Normalized) 1.6 1.8 On-Resistance vs. Junction Temperature VGS = 10 V, ID = 4.8 A 1.4 1.2 4 VGS = 4.5 V, ID = 4.2 A 1.0 2 0.8 0 0 6 12 18 24 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 73776 S-60216--Rev. A, 20-Feb-06 TJ - Junction Temperature (_C) www.vishay.com 3 SI5424DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage rDS(on) - Drain-to-Source On-Resistance (W) 20 10 TA = 150 _C 1 0.06 ID = 4.8 A On-Resistance vs. Gate-to-Source Voltage 0.05 I S - Source Current (A) 0.04 TA = 125 _C 0.03 TA = 25 _C 0.1 0.02 TA = 25 _C 0.01 0.01 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 2.0 1.8 40 1.6 VGS(th) (V) 1.4 1.2 1.0 0.8 10 0.6 0.4 -50 0 10-3 ID = 250 mA Power (W) 30 50 Single Pulse Power 20 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 BVDSS Limited 0.01 TA = 25 _C Single Pulse 0.001 0.1 1 10 100 dc 10 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73776 S-60216--Rev. A, 20-Feb-06 www.vishay.com 4 SI5424DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 16 8 Vishay Siliconix Power De-Rating 12 ID - Drain Current (A) Power Dissipation (W) 6 8 Package Limited 4 4 2 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73776 S-60216--Rev. A, 20-Feb-06 www.vishay.com 5 SI5424DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 _C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73776. www.vishay.com Document Number: 73776 S-60216--Rev. A, 20-Feb-06 6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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